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机译:叠层InAs量子点与InAlGaAs和高温生长的GaAs的组合封顶
Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, Maharashtra, India;
Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, Maharashtra, India;
Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, Maharashtra, India;
Homer L Dodge Department of Physics and Astronomy, Center for Semiconductor Physics in Nanostructures, University of Oklahoma, 440 West Brooks Street, Norman, OK 73019, USA;
Department of Electronics & Electrical Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G128LT, United Kingdom;
MBE; multilayer QDs; RHEED; XTEM;
机译:InAlGaAs和GaAs组合势垒厚度对MBE生长的InAs / GaAs量子点异质结构堆叠层中点形成持续时间的影响
机译:四元合金(InAlGaAs)封顶的InAs / GaAs多层量子点异质结构的热稳定性,其生长速率,势垒厚度,种子量子点单层覆盖率和生长后退火均会发生变化
机译:应变和相分离对InP(001)上生长的五层InAs / InAlGaAs量子点对准特性的影响
机译:在两层10周期InGaAs和盖有GaAs的InAs量子点红外光电探测器焦平面阵列上生长的6.5 nm厚的Al2O3表面钝化层
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
机译:在InAlGaAs / InP上生长的InAs量子点中温度稳定的1.55μm光致发光