6.5 nm-thick Al2O3 Surface passivated layer grown on two stacks of 10-period InGaAs and GaAs-capped InAs Quantum Dot Infrared Photodetector Focal Plane Arrays for high temperature operation

摘要

The study is to demonstrate a dual-band infrared images based on two stacked InGaAs and GaAs-capped InAs QDIP structure, with the use of nano-scale Al2O3 surface passivated layer by ALD system deposited to decrease the device shot noise and boost the operation temperature of the thermal imaging FPA to 180 K.