机译:脉冲电泳沉积形成核@多壳CdSe @ CdZnS-ZnS量子点异质结构膜
Division of Advanced Materials Engineering and Research Centre for Advanced Materials Development, College of Engineering, Chonbuk National University, Jeonju 561-756, South Korea;
Division of Advanced Materials Engineering and Research Centre for Advanced Materials Development, College of Engineering, Chonbuk National University, Jeonju 561-756, South Korea;
Division of Advanced Materials Engineering and Research Centre for Advanced Materials Development, College of Engineering, Chonbuk National University, Jeonju 561-756, South Korea;
Division of Advanced Materials Engineering and Research Centre for Advanced Materials Development, College of Engineering, Chonbuk National University, Jeonju 561-756, South Korea;
Division of Advanced Materials Engineering and Research Centre for Advanced Materials Development, College of Engineering, Chonbuk National University, Jeonju 561-756, South Korea;
University - Industry Cooperation Centre, Daegu Gyeongbuk Institute of Science and Technology, Techno Jungang Daero, Hyeonpung-Myeon, Dalseong-gun, Daegu 711-873, South Korea;
Division of Advanced Materials Engineering and Research Centre for Advanced Materials Development, College of Engineering, Chonbuk National University, Jeonju 561-756, South Korea;
CdSe@CdZnS-ZnS; Core@multi-shell; Quantum dot heterostructure; Pulse electrophoresis deposition;
机译:脉冲激光沉积形成的含Si(Ge)量子点的氧化膜异质结构的光电性能
机译:通过在顶部和原位后退火中使用亚单层碳沉积,在Ge / Si异质结构中形成Ge点或膜
机译:通过预沉积Ge / Si膜的扫描脉冲激光退火形成均匀的高密度小尺寸Ge / Si量子点
机译:通过雾沉积形成超薄量子点薄膜
机译:弛豫铁电体铌酸镁铅-钛酸铅薄膜和异质结构的脉冲激光沉积。
机译:石墨烯和石墨烯的光检测异质结构封装胶体量子点薄膜
机译:通过扫描脉冲激光退火预先沉积的Ge / si薄膜,形成均匀的高密度和小尺寸Ge / si量子点