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Enhanced photovoltaic performance of quantum dot-sensitized solar cell fabricated using Al-doped ZnO nanorod electrode

机译:铝掺杂ZnO纳米棒电极制备的量子点敏化太阳能电池的增强光伏性能

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ZnO and Al doped ZnO nanorods have been successfully synthesized on ITO substrate via solgel dip coating method without using any catalyst. The X-ray diffraction studies showed that the Al doped ZnO samples are of hexagonal wurtzite structure. The Al ions were successfully incorporated into the ZnO lattice. Scanning electron microscopy images reveal that the average diameter of ZnO nanorods and Al doped ZnO nanorods are ~300 nm and ~200 nm respectively. The energy dispersive X-ray (EDS) analysis confirmed the presence Al in the ZnO thin films. The CdS quantum dot sensitized Al doped ZnO solar cell exhibited a power conversion efficiency of 1.5%.
机译:ZnO和Al掺杂的ZnO纳米棒已通过solgel浸涂法在ITO衬底上成功合成,无需使用任何催化剂。 X射线衍射研究表明,掺杂Al的ZnO样品具有六方纤锌矿结构。 Al离子已成功地并入ZnO晶格中。扫描电子显微镜图像显示,ZnO纳米棒和Al掺杂的ZnO纳米棒的平均直径分别为〜300 nm和〜200 nm。能量色散X射线(EDS)分析证实了ZnO薄膜中存在Al。 CdS量子点敏化的Al掺杂ZnO太阳能电池的功率转换效率为1.5%。

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