首页> 外国专利> METHOD FABRICATING QUANTUM DOT-SENSITIZED PHOTOVOLTAIC CELL

METHOD FABRICATING QUANTUM DOT-SENSITIZED PHOTOVOLTAIC CELL

机译:方法制造量子点敏感的光伏电池

摘要

PURPOSE: A method fabricating quantum dot-sensitized photovoltaic cell is provided to constitute the TiO2 nanoparticle in the TiCl4 solution. CONSTITUTION: The porosity titanium dioxide(TiO2) layer is formed in upper part of the transparent conductive substrate. The quantum dot CdS is formed by the spray-pyrolysis of the precursor solution to the porosity titanium dioxide(TiO2) layer. After dipping the substrate having the quantum dot CdS in the TiSl4TiCl4 solution, the photo anode is formed by heat-treatment. After the cathode is positioned in order to put opposite to photocathode, electrolyte is the hermetic sealing. The thermal process operates in 400C to 450C. The precursor solution contains the sulfur precursor of the cadmium precursor of 0.001M to 0.5M and 0.001M to 0.5M.
机译:目的:提供一种制造量子点敏化光伏电池的方法,以在TiCl4溶液中构成TiO2纳米颗粒。组成:在透明导电基板的上部形成有孔隙度的二氧化钛(TiO2)层。量子点CdS是通过将前体溶液喷雾热解为孔隙度的二氧化钛(TiO2)层而形成的。在将具有量子点CdS的基板浸入TiS14TiCl4溶液中之后,通过热处理形成光阳极。在将阴极放置在与光电阴极相对的位置后,电解质就是气密密封。热处理在400℃至450℃下进行。前体溶液包含0.001M至0.5M和0.001M至0.5M的镉前体的硫前体。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号