Enhanced photovoltaic performance of quantum dot-sensitized solar cells with a progressive reduction of recombination using Cu-doped CdS quantum dots

摘要

In this article, we have systematically probed the effect of Cu-doping in CdS quantum dots (QDs) to enhance the photovoltaic performance of the quantum dot-sensitized solar cells (QDSSCs). The Cu-doped CdS photoanodes were prepared by successive ionic layer adsorption and reaction (SILAR) method and the corresponding cell devices were fabricated using CuS counter electrodes with a polysulfide electrolyte. The photovoltaic performance results demonstrate that 3 mM Cu-doped CdS QDs based QDSSCs exhibit the efficiency (eta) of 3% including J(SC) = 9.40 mA cm(-2), V-OC = 0.637 V, FF = 0.501, which are higher than those with bare CdS (eta = 2.05%, J(SC) = 7.12 mA cm(-2), V-OC = 0.588 V, FF = 0.489). The structural, topographical and optical properties of the thin films have been studied with the help of X-ray diffraction pattern (XRD), atomic force microscopy (AFM) and UV-vis spectrophotometer. Electrochemical impedance spectroscopy (EIS) and open circuit voltage decay (OCVD) measurements indicate that Cu-dopant can inhibit the charge recombination at the photoanode/electrolyte interface and extend the lifetime of electrons. These results reveal that incorporation of copper metal in CdS QDs is a simple and effective method to improve the photovoltaic properties of QDSSCs. (C) 2016 Elsevier B.V. All rights reserved.