Power gain assessment of ITO based Transparent Gate Recessed Channel (TGRC) MOSFET for RF/wireless applications

摘要

In this work, power gain assessment and intrinsic delay of Transparent Gate Recessed Channel (TGRC) MOSFET have been observed for RF applications and the results so obtained have been compared with Conventional Recessed Channel (CRC) MOSFET. Simulation results show that TGRC architecture has significantly improved the power gains in terms of maximum available power gain (Gma), maximum transducer power gain (G_(MT)). maximum stable power gain (Gms) and appreciable reduction in intrinsic delay as compared to CRC-MOSFET owing to indium tin oxide (ITO) in recessed channel as a conducting gate material and thus providing its efficacy for low power switching applications. Further, effect of gate length scaling has also been observed on TGRC MOSFET and it has been found that the cut-off frequency (f_T) and maximum oscillator frequency (f_(MAX)) enhances by 66% and 36% respectively as channel length scales down to 20 nm. Further, the effect of negative junction depth, oxide thickness and substrate doping have also been investigated for TGRC-MOSFET. This TCAD assessment has been done at frequencies of several THz which fortify its use for high frequency RF/wireless applications.