机译:P衬底全耗尽Ge NMOS的漏极诱导势垒降低(DIBL)效应和亚阈值特性的研究
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China;
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China;
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China;
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China;
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China;
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China;
Fully-depleted Ge NMOS; P-substrate; DIBL; Subthreshold characteristics;
机译:圆柱栅MOSFET新器件结构的阈值电压VTH,亚阈值摆幅和漏极诱导的势垒衰减(DIBL)的解析模型
机译:衬底偏置对短沟道NMOS FET中的漏极诱导势垒降低(DIBL)的影响
机译:碳纳米管场效应晶体管(CNTFET)的漏极诱导势垒降低(DIBL),阈值电压下降(Delta V-t下降)和漏极电流的研究
机译:漏极诱导屏障降低(DIBL)效应的研究表明SI NMOSFET
机译:建立体外血脑脊液屏障模型以研究铅诱导的脑屏障损伤的机制。
机译:降低直肠癌切除后吻合口渗漏的危险因素分析包括排水型:回顾性单中心研究
机译:应变Si nMOSFET的漏极诱导势垒降低(DIBL)效应研究