Transparent Cu_4O_3/ZnO heterojunction photoelectric devices

摘要

The present article reports the development of flexible, self-biased, broadband, high speed and transparent heterojunction photodiode, which is essentially important for the next generation electronic devices. We grow semitransparent p-type Cu_4O_3 using the reactive sputtering method at room temperature. The structural and optical properties of the CU_4O_3 film were investigated by using the X-ray diffraction and UV-visible spectroscopy, respectively. The p-Cu_4O_3-ZnO heterojunction diode under dark condition yields rectification behavior with an extremely low saturation current value of 1.8 × 10~(-10) A and a zero bias photocurrent under illumination condition. The transparent p-Cu_4O_3-ZnO heterojunction photodetector can be operated without an external bias, due to the light-induced voltage production. The metal oxide heterojunction based on Cu_4O_3/ZnO would provide a route for the transparent and flexible photoelectric devices, including photo-detectors and photovoltaics.