Heterojunction photoelectricity component and heterojunction photoelectricity device

摘要

PURPOSE:To obtain a hetero-junction photoelectric element of high efficiency by a method wherein the layer is changed into amorphous Si1-x-yOxNy wherein the optical band width and the electric conductivity at 20 deg.C are set at specific values, and then the diffusion potential in the case of P-I-N junction is set at Vd =1.1V or more. CONSTITUTION:An insulation thin film 2 of SiO2, etc. of 1017/OMEGAcm or less is formed on a foil 1 of Al Cu, etc., the amorphous Si1-x-yOxNy is superposed via an electrode 3, the N-I-P junction is formed of layers 4-6, and then ITO 7 is added. Thereat, the thicknesses of the N and P layers are 30-300Angstrom , the composition is selected at 0.04(x+y)0.5, y=0, H and/or F of 3-40atom% to the sum of Si and O and contained, and thus the Eg of the P and N layers is set to approx. 1.18eV or more, the electric conductivity at 20 deg.C to approx. 10-8OMEGAcm or more, and the diffusion potential of the P-I-N junction to 1.1V or more. The irradiation from the side of the electrode 7 in this constitution enables the hetero-junction photoelectric element to operate at a high efficiency. For the irradiation from the side of an N layer, the P layer 6 can be superposed on the electrode 3, insulation film 2, and metallic foil 1.