• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Superlattices and microstructures >Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs
【24h】

Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

机译：反转，累积和无结模式体锗FinFET的研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (L_G) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold slope (SS~64mV/dec). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large I_(ON)/I_(OFF) ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |V_(TH)| ~ 0.31 V is maintained. Moreover, the calculated quantum capacitance (C_q) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.
机译：通过使用3-D量子论证明了具有3nm栅极长度（L_G）的体锗FinFET器件的n型和p型反转（IM）模式，累积（AC）模式和无结（JL）模式的特性性能运输设备模拟。模拟的块状Ge FinFET器件具有良好的短沟道特性，包括漏极引起的势垒降低（DIBL <10 mV / V），亚阈值斜率（SS〜64mV / dec）。处于开态和关态的电子密度分布也表明，模拟器件的I_（ON）/ I_（OFF）比率较大。维持均匀的源极/漏极掺杂，并且在不同的操作模式之间仅改变沟道掺杂。同样，恒定的阈值电压| V_（TH）|维持〜0.31V。此外，Ge纳米线的计算量子电容（C_q）值强调了量子约束效应（QCE）对超大规模器件性能的重要性。

著录项

  • 来源
    《Superlattices and microstructures》 |2017年第11期|649-655|共7页
  • 作者

    Vasanthan Thirunavukkarasu; Jaehyun Lee; Toufik Sadi; Vihar P. Georgiev; Fikru-Adamu Lema; Karuppasamy Pandian Soundarapandian; Yi-Ruei Jhan; Shang-Yi Yang; Yu-Ru Lin; Erry Dwi Kurniawan; Yung-Chun Wu; Asen Asenov;

  • 作者单位

    Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan,Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan and National Tsing Hua University, Hsinchu 300, Taiwan,Device Modeling Croup, School of Engineering, University of Glasgow, Glasgow, Scotland, UK;

    Device Modeling Croup, School of Engineering, University of Glasgow, Glasgow, Scotland, UK;

    Device Modeling Croup, School of Engineering, University of Glasgow, Glasgow, Scotland, UK;

    Device Modeling Croup, School of Engineering, University of Glasgow, Glasgow, Scotland, UK;

    Device Modeling Croup, School of Engineering, University of Glasgow, Glasgow, Scotland, UK;

    Device Modeling Croup, School of Engineering, University of Glasgow, Glasgow, Scotland, UK;

    Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan;

    Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan;

    Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan;

    Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan,Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan and National Tsing Hua University, Hsinchu 300, Taiwan;

    Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan;

    Device Modeling Croup, School of Engineering, University of Glasgow, Glasgow, Scotland, UK,Gold Standard Simulations Ltd. (now part of Synopsys), Glasgow G3 7JT, Scotland, UK;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Germanium; Junctionless; FinFETs; 3D TCAD simulation; Quantum confinement effects;

    机译：锗;无结FinFET;3D TCAD仿真;量子约束效应;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号