Improved Metal Oxide Semiconductor Field Effect Transistor models with wide temperature range including cryogenic temperature

摘要

The analytical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) models with wide temperature range including cryogenic temperature have been presented in this paper. Based on the Berkeley Short-channel IGFET Model (BSIM) core, the mobility model, the threshold voltage model, the velocity saturation model and the parasitic resistance model have been updated and added to precisely describe the characteristics of MOSFETs at wide temperature range. The presented models have been verified by different MOSFETs and a capacitor charge-discharge circuit at regular and cryogenic temperatures. The measurement and simulation results have demonstrated the considerable accuracy and general applicability of the proposed models.