Analytical modeling of label free biosensor using charge plasma based gate underlap dielectric modulated MOSFET

摘要

In this paper charge plasma based dielectric modulated four gated MOSFET (CP-GUDM-MOSFET) has been proposed for the efficacy of label free electrical detection of the bio-molecules. To achieve low thermal budgeting, charge-plasma concept is employed using appropriate metal work function electrodes. Extensive simulations have been done using the Sentaurus TCAD to validate the proposed architecture. An analytical modeling has also been done on surface potential and drain current to consolidate the feasibility of the structure. Significant improvements in the on current (I_(on)) and threshold voltage have been observed in presence of the charged biomolecules. The performance of proposed structure is found to be sensitive to gate-oxide thickness variations. High sensitivity of the proposed CP-GUDM-MOSFET based biosensor with low thermal budgeting scheme; simple structure and its compatibility with the existing CMOS processes make it an exciting alternative to the conventional FET-based biosensors.