Analysis and compact modeling of a vertical grounded-base n-p-nbipolar transistor used as ESD protection in a smart power technology

摘要

A thorough analysis of the physical mechanisms involved in anvertical grounded-base n-p-n bipolar transistor (VGBNPN) undernelectrostatic discharge (ESD) stress is first carried out by usingntwo-dimensional (2-D) device simulation, transmission line pulsenmeasurement (TLP) and photoemission experiments. This analysis is usednto account for the unexpected low value of the VGBNPN snapback holdingnvoltage under TLP stress. A compact model based on a new avalanchenformulation resulting from the exact resolution of the ionizationnintegral is therefore proposed