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A Reprogrammable EDGE Baseband and Multimedia Handset SoC With 6-Mbit Embedded DRAM

机译:具有6兆位嵌入式DRAM的可重编程EDGE基带和多媒体手机SoC

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A CMOS EDGE baseband and multimedia handset SoC features a dual core (microcontroller and DSP) architecture together with all the necessary interface logic and hardware accelerators interconnected by a multi-layer bus. The DSP memory hierarchy features an instruction cache coupled to a 6-Mbit embedded DRAM instruction memory allowing in the field software flexibility (for example dynamic upgrade of DSP software), while minimizing power and area (closely matching a ROM based solution). The chip is implemented in a 130-nm 6-metal layer CMOS process and is packaged in a 12 × 12 ball-grid array. Full chip standby mode current is 690 μA (with data retention), resulting in a 500 hour complete GSM/EDGE terminal autonomy.
机译:CMOS EDGE基带和多媒体手机SoC具有双核(微控制器和DSP)架构,以及通过多层总线互连的所有必需的接口逻辑和硬件加速器。 DSP存储器层次结构具有与6兆位嵌入式DRAM指令存储器耦合的指令高速缓存,从而使现场软件具有灵活性(例如,DSP软件的动态升级),同时最大限度地减小了功耗和面积(与基于ROM的解决方案紧密匹配)。该芯片采用130nm的6金属层CMOS工艺实现,并封装在12×12球栅阵列中。全芯片待机模式电流为690μA(具有数据保留),从而实现了500小时完整的GSM / EDGE终端自治。

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