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A 90-nm CMOS Low-Power GSM/EDGE Multimedia-Enhanced Baseband Processor With 380-MHz ARM926 Core and Mixed-Signal Extensions

机译:具有380MHz ARM926内核和混合信号扩展的90nm CMOS低功耗GSM / EDGE多媒体增强基带处理器

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摘要

To meet the widely varying speed and power requirements of multifunctional mobile devices, an appropriate combination of technology features, circuit-level low-power techniques, and system architecture is implemented in a GSM/Edge baseband processor with multimedia and mixed-signal extensions. Power reduction techniques and performance requirements are derived from an analysis of relevant use cases and applications. The 44 mm2 baseband processor is fabricated in a 90-nm low-power CMOS technology with triple-well option and dual-gate oxide core devices. The ARM926 core achieves a maximum clock frequency of 380 MHz at 1.4-V supply due to the usage of thin oxide (1.6 nm) devices. Power dissipation can be adapted to the performance requirements by means of combined voltage and frequency scaling to reduce active power consumption in medium-performance mode by 68%. To reduce leakage currents during standby mode, large SRAM blocks, nFET sleep transistors, and circuit components with relaxed performance requirements are implemented using devices with 2.2-nm gate oxide thickness
机译:为了满足多功能移动设备广泛的速度和功率要求,在具有多媒体和混合信号扩展功能的GSM / Edge基带处理器中实现了技术功能,电路级低功耗技术和系统体系结构的适当组合。功耗降低技术和性能要求来自对相关用例和应用程序的分析。 44 mm2基带处理器采用90纳米低功耗CMOS技术制造,具有三阱选项和双栅氧化核心器件。由于使用了薄氧化物(1.6 nm)器件,ARM926内核在1.4V电源下可达到380 MHz的最大时钟频率。可以通过组合电压和频率缩放使功耗适应性能要求,以将中性能模式下的有功功耗降低68%。为了减少待机模式下的泄漏电流,使用2.2纳米栅极氧化层厚度的器件实现了大型SRAM块,nFET睡眠晶体管和对性能要求宽松的电路组件

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