机译:通用的CMOS晶体管阵列IC,用于时零可变性,RTN,BTI和HCI的统计表征
Univ Autonoma Barcelona, Elect Engn Dept, E-08193 Barcelona, Spain;
Univ Autonoma Barcelona, Elect Engn Dept, E-08193 Barcelona, Spain;
Univ Autonoma Barcelona, Elect Engn Dept, E-08193 Barcelona, Spain;
CSIC, CNM, IMSE, Inst Microelect Sevilla, Seville 41092, Spain|Univ Seville, Seville 41092, Spain;
CSIC, CNM, IMSE, Inst Microelect Sevilla, Seville 41092, Spain|Univ Seville, Seville 41092, Spain;
Univ Politecn Cataluna, Dept Engn Elect, ES-08034 Barcelona, Spain;
Univ Politecn Cataluna, Dept Engn Elect, ES-08034 Barcelona, Spain;
Univ Politecn Cataluna, Dept Engn Elect, ES-08034 Barcelona, Spain;
CSIC, CNM, IMSE, Inst Microelect Sevilla, Seville 41092, Spain|Univ Seville, Seville 41092, Spain;
Univ Autonoma Barcelona, Elect Engn Dept, E-08193 Barcelona, Spain;
Aging; bias temperature instability (BTI); CMOS; degradation; hot carrier injection (HCI); negative BTI (NBTI); positive BTI (PBTI); random telegraph noise (RTN); reliability; statistical characterization; variability;
机译:纳米级MOSFET中的RTN和BTI:全面的统计模拟研究
机译:90nm CMOS晶体管阵列式模拟布局的直流特性和可变性
机译:纳米级晶体管中BTI引起的动态可变性的表征和建模
机译:用于过程可变性,RTN和BTI / CHC老化的统计表征的晶体管阵列芯片
机译:CMOS器件的可变性建模和统计参数提取
机译:作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
机译:多功能CMOS晶体管阵列IC,用于零零变异性,RTN,BTI和HCI的统计表征
机译:电子光刻sTaR设计指南。第3部分:用于定制微处理器的马赛克晶体管阵列。第4部分:存储逻辑阵列,sLas用时钟CmOs实现