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首页> 外文期刊>Sensors and Actuators >Electrospinning preparation and room temperature gas sensing properties of porous In_2O_3 nanotubes and nanowires
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Electrospinning preparation and room temperature gas sensing properties of porous In_2O_3 nanotubes and nanowires

机译:多孔In_2O_3纳米管和纳米线的电纺丝制备及室温气敏性能。

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摘要

Porous In_2O_3 nanotubes (NTs) and nanowires (NWs) in cubic phase were fabricated via electrospinning and characterized by scan electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and N_2 adsorption experiments. The NTs had an average outer diameter of ~80 nm and wall thickness of ~15 nm, while the NWs had a diameter of ~120 nm. The gas sensing properties of the prepared NTs/NWs were measured for H_2S. The results demonstrate that the sensors had optimum and high responses to H_2S at room temperature in dilute 1-100ppm concentration range. They also display excellent selectivity, anti-interference and stability. The gas sensing mechanism at room temperature was attributed to the sulfuration of In_2O_3. The present electrospun In_2O_3 NTs/NWs have demonstrated the potential applied for H_2S gas detection under room temperature.
机译:通过静电纺丝制备了立方相的多孔In_2O_3纳米管(NTs)和纳米线(NWs),并通过扫描电子显微镜(SEM),透射电子显微镜(TEM),X射线衍射(XRD)和N_2吸附实验进行了表征。 NT的平均外径约为80 nm,壁厚约为15 nm,而NW的平均直径约为120 nm。测量了制备的NTs / NWs的H_2S气敏特性。结果表明,该传感器在稀浓度1-100ppm的室温下对H_2S具有最佳响应和较高响应。它们还显示出优异的选择性,抗干扰性和稳定性。室温下的气敏机理归因于In_2O_3的硫化。目前的电纺In_2O_3 NTs / NWs已经证明了在室温下检测H_2S气体的潜力。

著录项

  • 来源
    《Sensors and Actuators》 |2010年第2期|P.531-538|共8页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, Jilin 130012, PR China;

    rnState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, Jilin 130012, PR China;

    rnState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, Jilin 130012, PR China;

    rnState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, Jilin 130012, PR China;

    rnState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, Jilin 130012, PR China;

    rnState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, Jilin 130012, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    electrospinning; indium oxide; gas sensor; nanowires; nanotubes;

    机译:电纺;氧化铟气体传感器纳米线;纳米管;

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