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Size-dependent optical edge shifts and electrical conduction behaviour of RF magnetron sputtered CdTe nanocrystals : TiO_2 composite thin films

机译:射频磁控溅射CdTe纳米晶体:TiO_2复合薄膜的尺寸依赖性光学边缘位移和导电行为

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摘要

CdTe nanocrystals sequestered and passivated in an amorphous TiO_2 thin film matrix have been prepared by RF sputtering from a composite TiO_2 :CdTe target. The CdTe nanocrystal size and volume fraction increases from 15 to 40 nm and 2 to 20/100 respectively as the film thickness increases, typically from 0.05 to 0.25 μm. A systematic dependence of the optical band edge on the CdTe nanocrystal size shows a strong quantum confinement effect. The optical edge shifts are significantly higher than the theoretical prediction based on single--particle confinement of decoupled electrons and holes. This is understood on the basis of nucleation-controlled growth of CdTe nanocrystals by direct vapour phase condensation, in which small nuclei are rapidly passivated by TiO_2 depositing at much higher rates. The nano-sized CdTe growth island thus formed comprises of several TiO_2 passivated nanocrystals. Electrical conduction behaviour of these films show that tunnelling between the CdTe nanocrystals is not a dominant mechanism, as a three-dimensional network is not realized due to small thickness and lower coverage. The current transport is essentially space-charge--limited. The injection of electrons from nano-sized CdTe crystals follows spherical radial space charge flow which modifies the usual power law dependence from quadratic to 3/2. The analytical description of the current conduction process in composite CdTe:TiO_2 is discussed.
机译:通过射频溅射从复合TiO_2:CdTe靶材制备了螯合并钝化在无定形TiO_2薄膜基质中的CdTe纳米晶体。随着膜厚度的增加,CdTe纳米晶体的尺寸和体积分数分别从15纳米增加到40 nm,体积分数从2增大到20/100,通常从0.05到0.25μm。光学带边缘对CdTe纳米晶体尺寸的系统依赖性显示出强大的量子约束效应。光学边缘位移明显高于基于解耦电子和空穴的单粒子约束的理论预测。这是基于通过直接气相凝结对CdTe纳米晶体进行成核控制生长的基础而理解的,其中通过以高得多的速率沉积TiO_2可以快速钝化小核。如此形成的纳米级CdTe生长岛由几种TiO_2钝化的纳米晶体组成。这些薄膜的导电行为表明,CdTe纳米晶体之间的隧穿不是主要机制,因为由于厚度小和覆盖率低而无法实现三维网络。当前的运输实质上是受空间电荷限制的。从纳米尺寸的CdTe晶体中注入电子遵循球形径向空间电荷流,该电荷流将通常的幂定律依赖性从二次修正为3/2。讨论了复合CdTe:TiO_2中电流传导过程的解析描述。

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