Epitaxial GaN_xAs_1-x layer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gas

摘要

We report a novel method to synthesize GaN_xAs_1-x epitaxial films. The (001) GaAs substrates were irradiated by a pulsed laser in a nitrogen atmosphere at room temperature. High-resolution x-ray diffraction indicates the formation of an epitaxial GaN_xAs_1-x layer on the substrate. The effects of the ambient pressure and the laser parameters (fluence, repetition rate and number of shots) on the incorporated N content x and film quality are studied. A threshold laser fluence must be achieved in order that N can be incorporated. The maximum extent of x obtained is about 1/100.