InAs self assembled quantum dots on GaAs/InP by low-pressure metal-organic chemical vapour deposition

摘要

In this paper, a thin tensile GaAs interlayer was used to obtain a regular arrangement of InAs quantum dots on an InP substrate by low-pressure metal--organic chemical vapour deposition (LP-MOCVD). Photoluminescence (PL) spectra, atomic force microscopy image and Raman spectra have been investigated. Some theoretical calculations in the PL and Raman spectra have been performed. The conclusions coincide well with our experiment results.