Inducing charge into V-groove quantum wires via a field effect from a back gate is investigated by solving the Laplace and Poisson equations analytically, using a sequence of three conformal mapping transformations. These solutions show that the V-groove geometry is much more effective than the corresponding planar geometry. Induced charge densities of order 10~8 m~-1 are well within present growth and processing capabilities and offer the prospect of clean, high-conductivity devices without the need for modulation doping.
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