Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm−2.
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机译:提供信息存储功能的非易失性存储器是至关重要的电路组件。固溶处理的有机铁电存储二极管是柔性电子产品的非易失性存储候选产品,如在塑料箔上制造的1 kb可重构存储器的工业演示所证明的那样。然而,由于对高密度阵列的技术实现所必需的对器件物理的了解不足,限制了进一步的发展。在这里,我们显示铁电二极管在夹断状态下用作垂直场效应晶体管。隧道注入和电荷积累是控制器件工作的基本机制。令人惊讶的是,可以忽略热电子发射,并且通态电流不受空间电荷的限制。所提出的模型解释并统一了各种各样的实验,为实现有机铁电存储二极管提供了重要的设计规则,并预测了最终理论阵列密度最高为10 12 sup> bit cm −2 sup>。
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