首页> 外国专利> Quantum wire CCD charge pump

Quantum wire CCD charge pump

机译:量子线CCD电荷泵

摘要

The very accurate quantization of charge transport or electron current is achieved within a heterostructure substrate by defining a quantum wire within the substrate and propagating a a.c. potential characterized by a travelling wave envelope along the length of the quantum wire. The travelling wave a.c. potential is applied to the length of the quantum wire by two opposing lateral gate arrays defined within the substrate. For each gate on the array is provided a corresponding gate on the opposing array which is offset in the direction of the current transport by a predetermined distance. A succeeding space is then provided in both arrays where there is no gate. An offset a.c. potential is then applied to the gate of one array, the offset gate of the opposing array and to the array as a whole through an overlying gate running the longitudinal length of the quantum, wire which gate applies a spatially independent a. c. potential along the length of the quantum wire.
机译:通过在衬底中定义量子线并传播a.c,可以在异质结构衬底中实现非常精确的电荷传输或电子电流量化。以沿着量子线长度的行波包络为特征的电势。行波交流通过在衬底内定义的两个相对的横向门阵列将电势施加到量子线的长度上。对于阵列上的每个栅极,在相对的阵列上提供了对应的栅极,其在电流传输的方向上偏移了预定距离。然后在没有门的两个阵列中提供一个后续空间。偏移量a.c.然后,通过沿量子的纵向长度延伸的上覆栅极向一个阵列的栅极,相对阵列的偏置栅极以及整个阵列施加电势,该栅极施加空间独立的α。 C。沿量子线长度的电位。

著录项

  • 公开/公告号US5144580A

    专利类型

  • 公开/公告日1992-09-01

    原文格式PDF

  • 申请/专利权人 REGENTS OF THE UNIVERSITY OF CALIFORNIA;

    申请/专利号US19900570904

  • 发明设计人 QIAN NIU;KLAUS ENSSLIN;

    申请日1990-08-21

  • 分类号H01L29/796;

  • 国家 US

  • 入库时间 2022-08-22 05:22:18

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号