Effects Of Hydrogen Irradiation On The Optical And Electronic Properties Of Site-controlled InGaAsN V-groove Quantum Wires

摘要

The properties of InGaAsN V-groove quantum wires (QWRs) -both untreated and irradiated with atomic hydrogen- are probed via micro-magneto-photoluminescence (PL) and polarization-dependent PL. As generally observed in dilute-nitride materials, H irradiation is found to fully passivate nitrogen, thus allowing us to accurately assess -and to precisely control- the effects of N incorporation in the QWRs.