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机译:在预先形成图案的GaAs衬底上生长的单点控制InGaAsN量子线的磁光特性
Dipartimento di Fisica, Sapienza Universita di Roma, P. le A. Mow 2, 00185 Roma, Italy,Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL), CH.1015 Lausanne, Switzerland;
High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toemooiveld 7,6525 ED Nijmegen, The Netherlands,School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL), CH.1015 Lausanne, Switzerland;
Dipartimento di Fisica, Sapienza Universita di Roma, P. le A. Mow 2, 00185 Roma, Italy;
Dipartimento di Fisica, Sapienza Universita di Roma, P. le A. Mow 2, 00185 Roma, Italy;
Dipartimento di Fisica, Sapienza Universita di Roma, P. le A. Mow 2, 00185 Roma, Italy;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL), CH.1015 Lausanne, Switzerland ,Department of Physics, Technion-Israel Institute of Technology, Haifa 32000, Israel;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL), CH.1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL), CH.1015 Lausanne, Switzerland;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL), CH.1015 Lausanne, Switzerland;
High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toemooiveld 7,6525 ED Nijmegen, The Netherlands;
High Field Magnet Laboratory, Institute for Molecules and Materials, Radboud University Nijmegen, Toemooiveld 7,6525 ED Nijmegen, The Netherlands;
Dipartimento di Fisica, Sapienza Universita di Roma, P. le A. Mow 2, 00185 Roma, Italy;
Laboratory of Physics of Nanostructures, Ecole Polytechnique Federate de Lausanne (EPFL), CH.1015 Lausanne, Switzerland;
quantum wires; magnetooptical effects; quantum wires;
机译:分子束外延在预先形成图案的GaAs衬底上生长的定点InAs量子点的尺寸演化
机译:退火对InP衬底上生长的InGaAsN / GaAsSbⅡ型量子阱二极管性能的影响
机译:在预先形成图案的基板上生长的位置控制金字塔形量子点的高度均匀性
机译:氢辐射对位点控制IngaAsn V槽量子线的光学和电子性质的影响
机译:基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
机译:高衬底温度下通过液滴外延生长的单个InGaAs / GaAs量子点的单光子发射
机译:在预先形成图案的GaAs衬底上生长的单点控制InGaAsN量子线的磁光特性
机译:在预图案化和非图案化Gaas(100)衬底上生长的(0.25)Ga(0.75)as / alas基谐振隧道二极管