InALN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

摘要

The replacement of the AlGaN barrier layer of the AlGaN/GaN high electron mobility transistors (HEMTs) with InAlN of various In molar fractions is suggested. Internal polarization fields in the InAlN/(In)GaN quantum well are described using analytical formulae. InAlN/(In)GaN HEMTs quantum well free electron densities, transistor open channel drain Currents and threshold voltages are calculated for different In molar Fractions considering the maximal acceptable strain.