Negative differential resistance and multilevel memory effects in organic devices

摘要

Negative differential resistance (NDR) and multilevel memory effects were obtained in organic devices consisting of an anthracene derivative, 9, 10-bis-{9,9-di-[4-(phenyl-p-tolyl-amino)-phenyl]-9H-fluoren-2-yl}-anthracene (DAFA), sandwiched between Ag and ITO electrodes. The application of a negative bias voltage leads to negative differential resistance in current-voltage characteristics and different negative voltages produce different conductance currents, resulting in the multilevel memory capability of the devices. The NDR property has been attributed to charge trapping at the DAFA/Ag interface. This opens up a wide range of application possibilities of such organic-based NDR devices in memory and logic circuits.