首页>
外国专利>
Negative differential resistance (NDR) based memory device with reduced body effects
Negative differential resistance (NDR) based memory device with reduced body effects
展开▼
机译:基于负差分电阻(NDR)的存储器件,具有减小的人体效应
展开▼
页面导航
摘要
著录项
相似文献
摘要
A memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs. Various embodiments using common or separate wells for such elements are illustrated to achieve superior body effect performance results, including a silicon-on-insulator (SOI) implementation.
展开▼