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Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
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机译:基于绝缘体上硅(SOI)负差分电阻(NDR)的存储器件,具有减小的主体效应
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摘要
A silicon-on-insulator (SOI) memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs.
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