Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects

摘要

A silicon-on-insulator (SOI) memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs.