DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiN_x

摘要

The effects of sputtered and room temperature plasma enhanced chemical vapour deposition (RT-PECVD) SiN_x passivation on the dc and microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The pulsed Ⅰ-Ⅴ characteristics from a class B quiescent bias point and transient measurements indicate that the sputtered SiN_x passivation is more efficient in suppressing lag effects in AlGaN/GaN HEMTs. Dispersion-free sputtered SiN_x passivated AlGaN/GaN HEMTs were obtained using this technique. Continuous-wave (CW) measurements without active cooling give a maximum output power density of 6.6 W mm~(-1) at V_(gs) = —4 V, V_(ds) — 50 V and a maximum power added efficiency of 51.3% at V_(gs) = -4 V, V_(ds) = 30 V at 3 GHz on 2 x 50 μm AlGaN/GaN HEMTs on the sapphire substrate, with a gate length of 2 μm and without field-plated gates. To the best of our knowledge, this is the highest level power density reported on the sapphire substrate without field-plate design. The extrinsic cut-off frequency (f_t) and maximum oscillation frequency (f_(max)) are 51 GHz and 100 GHz, respectively, on 2 x 50 x 0.15 μm HEMTs. To our knowledge, the sputtered SiN_x passivation for AlGaN/GaN HEMTs is a unique technique, which has never been published before.