机译:具有部分凹入式SiN_x MIS结构的高性能常态AlGaN / GaN-on-Si HEMT
Department of Electrical and Computer Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical and Computer Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical and Computer Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
Department of Electrical and Computer Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea;
Department of Electrical and Computer Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea;
AlGaN; GaN; high electron mobility transistors; interface trap states; metal-insulator-semiconductor structures; power devices;
机译:采用部分凹陷和氟化陷阱电荷栅结构的无金,常态关闭的AlGaN / GaN-on-Si MIS-HEMT
机译:部分和完全凹入栅增强模式的AlGaN / GaN MIS HEMT在击穿机理上的比较研究
机译:增强模式AlGaN / GaN MIS-HEMTS使用高VTH和高Idmax使用凹陷结构,重新开始AlGAN屏障
机译:600 V高性能AlGaN / GaN HEMTS与ALN / SIN_X钝化
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:凹入式栅极结构对具有薄AlOxNy MIS栅极的AlGaN / GaN-on-SiC MIS-HEMT的影响
机译:具有超高室温2DEG迁移率的alGaN / GaN-on-si HEmT结构的晶圆级mOCVD生长