MIS TYPE NORMALLY-OFF HEMT ELEMENT OF RECESS STRUCTURE HAVING DRAIN CURRENT DENSITY/TRANSCONDUCTANCE IMPROVED GREATLY

摘要

PROBLEM TO BE SOLVED: To ensure a large drain current density and transconductance while achieving normal-off, in a HEMT element of nitride semiconductor.SOLUTION: In a MIS type CaN-based HEMT element where at least a channel layer and a barrier layer are laminated sequentially on a substrate, a source electrode and a drain electrode are formed on the barrier layer, and a gate electrode is formed via an insulator film at least on the channel layer from which the barrier layer is removed, the barrier layer is InAlN(0.05≤X≤0.30).