A metamorphic heterostructure field-effect transistor with a double delta-doped channel

摘要

This study presents a metamorphic heterostructure field-effect transistor with a double δ-doped channel (MDDFET). The coupled δ-doped In_(0.5)Ga_(0.5)As/δ~+/In_(0.5)Ga_(0.5)As/In_(0.6)Ga_(0.4)As/In_(0.5)Ga_(0.5)As/δ~+/In_(0.5)Ga_(0.5)As channel demonstrates high carrier concentration and high mobility due to the good carrier confinement of the δ-doped design and the coupled wavefunction in the undoped In-rich channel. Experimental results indicate that the MDDFET with the gate dimension of 0.65 x 100 μm~2 exhibits a maximum extrinsic transconductance of 320 mS mm~(-1), a saturated drain current density of 566 mA mm~(-1) at V_(GS) = 0 V, a cut-off frequency of 45 GHz, a maximum oscillation frequency of 125 GHz and a saturated power of 15.9 dBm at 5.8 GHz. These results demonstrate that this studied device is appropriate for high-frequency and high-power applications.