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首页> 外文期刊>Semiconductor science and technology >Physical properties and growth kinetics of co-sputtered indium-zinc oxide films
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Physical properties and growth kinetics of co-sputtered indium-zinc oxide films

机译：共溅射铟锌氧化物薄膜的物理性质和生长动力学

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摘要

Indium-doped zinc oxide (IZO) films were fabricated by radio-frequency (RF) magnetron sputtering through co-deposition of zinc oxide (ZnO) and indium (In) at ambient temperature. Transparency of the IZO films is higher than 80% in the visible range while the optical band gap decreases with increasing In dopant concentration. The optimal measured resistivity, Hall mobility and carrier concentration of the film are 1.39 × 10~(-3) Ω cm, 10.11 cm~2 V~(-1) s~(-1) and 5.35 × 10~(20) cm~(-3), respectively. The In dopant favors smoothing the film surface. The In dopant concentration in the film decreases vertically from the surface to the interface due to the surface segregation during the kinetic deposition process. The misfit strains of the films are gradually relaxed through dislocation.
机译：通过在室温下共沉积氧化锌（ZnO）和铟（In），通过射频（RF）磁控管溅射制备了掺杂铟的氧化锌（IZO）膜。在可见光范围内，IZO薄膜的透明度高于80％，而光学带隙随In掺杂剂浓度的增加而减小。薄膜的最佳测量电阻率，霍尔迁移率和载流子浓度为1.39×10〜（-3）Ωcm，10.11 cm〜2 V〜（-1）s〜（-1）和5.35×10〜（20）cm 〜（-3）。 In掺杂剂有助于使膜表面光滑。由于在动态沉积过程中表面偏析，膜中的In掺杂剂浓度从表面到界面垂直降低。薄膜的失配应变通过位错逐渐得到缓解。

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  • 来源
    《Semiconductor science and technology》 |2009年第9期|20.1-20.6|共6页
  • 作者

    Changgang Huang; Meili Wang; Quanlin Liu; Yongge Cao; Zhonghua Deng; Zhi Huang; Yuan Liu; Qiufeng Huang; Wang Guo;

  • 作者单位

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China School of Materials Science and Engineering & State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China;

    School of Materials Science and Engineering & State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China School of Materials Science and Engineering, Northwestern Polytechnical University, XiAn 710072, Shanxi Province, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 入库时间 2022-08-18 01:32:06

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