机译:使用局部阳极氧化和各向异性TMAH湿法蚀刻来控制硅电极的形状和间隙宽度
Nano-Optoelectronic Research (NOR) Lab, School of Physics, Universiti Sains Malaysia, 11800 Pulau Pinang, Malaysia;
Nano-Optoelectronic Research (NOR) Lab, School of Physics, Universiti Sains Malaysia, 11800 Pulau Pinang, Malaysia;
School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Pinang, Malaysia;
Nano-Optoelectronic Research (NOR) Lab, School of Physics, Universiti Sains Malaysia, 11800 Pulau Pinang, Malaysia;
Department of Mechanical Engineering, Universiti Teknologi Petronas, 31750 Perak, Malaysia;
Nano-Optoelectronic Research (NOR) Lab, School of Physics, Universiti Sains Malaysia, 11800 Pulau Pinang, Malaysia;
机译:KOH和TMAH中各向异性湿化学腐蚀过程中单晶硅表面的微观形貌
机译:阳离子对含有Tmah和Tmah的硅的各向异性蚀刻方法的影响
机译:TMAH + Triton对硅进行各向异性刻蚀的刻蚀轮廓控制
机译:具有三角形横截面梁的硅微观加速度计通过TMAH溶液各向异性湿法蚀刻
机译:用于纳米级应用的硅湿各向异性刻蚀机理。
机译:异丙醇浓度和刻蚀时间对低电阻晶体硅晶片湿化学各向异性刻蚀的影响
机译:改变表面张力在KOH和TMAH中进行硅各向异性蚀刻