COMPOSITION FOR WET ETCHING OF A SILICON OXIDE FILM WHICH CAN SELECTIVELY REMOVE THE SILICON OXIDE FILM IN A HIGH ETCHING RATE

摘要

PURPOSE: A composition for wet etching of a silicon oxide film is provided to enable use for treating a substrate for manufacturing a semiconductor in a single wafer type due to high etching selectivity of a silicon oxide film to a silicon nitride film and a high etching rate of the silicon oxide film.;CONSTITUTION: A composition for wet etching of a silicon oxide film comprises 1-40 weight% of hydrogen fluoride, 5-40 weight% of ammonium hydrogen fluoride(NH4HF2), and water, and further anionic surfactants. The anionic surfactant is selected from the group consisting of alkylbenzene sulfonate, alkyl sulfate, alkyl ether sulfate, alkoxylated amide, olefin sulfonate, alkyl xylene sulfonate, dialkyl sulfosuccinate, fatty acid ester sulfonate, alcohol sulfate, glutamate-, isethionate-, phosphate-, taurate-, alkoxylated alcohol-, and alkyl carboxylate-based compounds and their mixture.;COPYRIGHT KIPO 2011