Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs

摘要

We considered electron trapping and detrapping processes in the AlGaN barrier of AlGaN/GaN high electron mobility transistors as that trapping is the process of electrons directly tunneling from the gate metal into the AlGaN barrier traps while detrapping is electrons emission from the traps into the AlGaN conduction band by phonon-assisted tunneling. By fully coupling the electron emission characteristic time with the device thermal and electrical behavior, simulations were performed to comprehensively analyze the contributions of device bias, accounting for self-heating and electric field dependent electron detrapping. Discussions on the current-transient method for traps characterization based on these simulations and impact of traps-dependent reverse gate current on drain current collapse are presented.