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Interband interaction between bulk and surface resonance bands of a Pb-adsorbed Ge(001) surface

机译:Pb吸附的Ge(001)表面的本体和表面共振带之间的带间相互作用

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We investigated the valence band structure of a Pb-adsorbed Ge(001) surface by angle-resolved photoelectron spectroscopy. Three Ge bands, G1, G2, and G3, were observed in a Ge(001) 2 x 1 clean surface. In addition to these three bands, a fourth band (R band) is found on the surface with 2 ML of Pb. The R band continuously appeared even when the surface superstructure was changed. The position of the R band does not depend on Pb coverage. These results indicate that the R band derives from Ge subsurface states, known as surface resonance states. Furthermore, the effective mass of G3 is significantly reduced when the R band exists. We found that this reduction of G3 effective mass was explained by the interaction of the G3 and R bands. Consequently, the surface resonance band is considered to penetrate into the Ge subsurface region affecting the Ge bulk states. We determine the hybridization energy to be 0.068 eV by fitting the observed bands.
机译:我们通过角分辨光电子能谱研究了Pb吸附的Ge(001)表面的价带结构。在Ge(001)2 x 1清洁表面中观察到三个Ge带G1,G2和G3。除了这三个谱带外,在表面上还发现了第二个谱带(R谱带),含2 ML的Pb。即使改变表面上部结构,R带也连续出现。 R带的位置不取决于Pb的覆盖范围。这些结果表明,R谱带源自Ge的地下状态,即表面共振状态。此外,当R带存在时,G3的有效质量显着降低。我们发现,G3有效质量的这种降低是由G3和R谱带的相互作用解释的。因此,认为表面共振带渗透到影响Ge体积态的Ge地下区域。通过拟合观察到的条带,我们确定杂交能量为0.068 eV。

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