The gate length effect of high-performance monolayer SiAs_2 FETs

摘要

The monolayer SiAs2 field-effect transistors (FETs) with gate length (L (gate)) ranging from 1 to 50 nm were investigated by Silvaco-Atlas simulation in which the main parameters of monolayer SiAs2 were obtained by first-principles calculations. Both the p- and n-FET show extremely high on/off current ratio (10(14)) and low leakage current (10(-18) A mu m(-1)), which are independent of gate length within the 15-50 nm range. And monolayer SiAs2 FETs show practically acceptable values of subthreshold slope and drain-induced barrier lowering when L (gate) 30 nm. On the other hand, the p-and n-FETs show highest transconductance (g (m)) when L (gate) is between 25 and 35 nm. Our results suggest that the high performance 35 nm gate length monolayer SiAs2 FETs hold great potential for applications in low-dimensional electronic devices.