High-Performance Dual-Gate Carbon Nanotube FETs with 40-nm Gate Length

摘要

We report on a high-performance back-gated carbon nanotube field-effect transistor (CNFET) with a peak transcon-ductance of 12.5 μS and a delay time per unit length of τ/L = 19 ps/μm. In order to minimize the parasitic capacitances and optimize the performance of scaled CNFETs, we have utilized a dual-gate design and have fabricated a 40-nm-gate CNFET possessing excellent subthreshold and output characteristics without exhibiting short-channel effects.