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机译:锯齿状平板结构对AlGaN / GaN HEMTS的直流和RF性能的影响
Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Sch Microelect Xian 710071 Peoples R China;
Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Sch Microelect Xian 710071 Peoples R China;
Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Sch Microelect Xian 710071 Peoples R China;
Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Sch Microelect Xian 710071 Peoples R China;
AlGaN; GaN; high electron mobility transistors (HEMTs); gate field plate; breakdown;
机译:带有T形场板的AlGaN / GaN HEMT中电场和击穿性能的调制机制分析
机译:栅极结构对AlGaN / GaN HEMT的DC和RF性能的影响
机译:GaN沟道层厚度对复合AlGaN / GaN缓冲层GaN HEMT的DC和RF性能的影响
机译:栅极场板和??(γ)栅极结构对AlGaN / GaN HEMT射频功率性能的影响
机译:机械应力对AlGaN / GaN HEMT性能的影响:沟道电阻和栅极电流。
机译:基于PD-Algan / GaN HEMTS栅极偏压调制的二氧化氮气体传感器性能优化
机译:场板对AlGaN / GaN HEMT器件的RF性能的影响
机译:用于机载雷达的非制冷射频电子设备。 mBE的alGaN / GaN HEmT结构开发