机译:Al / TiO_2 / Si电容器溅射TiO_2薄膜的结构,电和介电性能
Department of Physics, Sri Venkateswara University, Tirupati 517502, India;
Department of Physics, Sri Venkateswara University, Tirupati 517502, India;
Department of Physics, Sri Venkateswara University, Tirupati 517502, India;
Department of Instrumentation and Applied Physics, Indian Institute of Science,Bangalore 560012, India;
Department of Physics, Sri Venkateswara University, Tirupati 517502, India;
Sputtering; Structure; Dielectric Constant; Schottky Emission;
机译:溅射功率对Al / TiO_2 / Si栅电容器TiO_2薄膜结构和电性能的影响
机译:射频磁控溅射沉积在Pt / tio_2 / sio_2 / si衬底上的Bi_(1.5)mg_(1.0)nb_(1.5)o_7薄膜的结构和电学性质
机译:厚度对RF溅射沉积Nb + Ta共掺杂TiO_2薄膜结构,形貌,电学和光学性质的影响
机译:氧分压对DC溅射(TA_2O_5)_(0.85)(TiO_2)_(0.15)薄膜的结构和电性能的影响Si上的薄膜
机译:TiO_2薄膜的反应溅射沉积工艺分析参见用法统计
机译:用高温溅射改性钛酸钡制造的薄膜电容器的电性能
机译:腔室压力对多层陶瓷电容器溅射MgTiO3Films介电性能的影响