Thyristor Resistance to the du/dt Effect, Taking Account of Cascade Electron and Hole Multiplication

摘要

The duldt effect in thyristors is investigated theoretically and experimentally, taking account of cascade electron and hole multiplication in the space-charge region of the collector p-n junction. The voltage in the off state is considered in the range from two thirds of the repeating voltage to almost the breakover voltage. The theoretical and experimental data are in good agreement. The results will be useful in creating thyristors that are self-protected against breakdown in switching without an external control signal.