CHARACTERIZATION OF ZIRCONIA THIN FILMS GROWN BY RADIO-FREQUENCY PLASMA ASSISTED LASER ABLATION

摘要

In this work we report on the deposition of zirconia as thin films by Radio-Frequency discharge assisted Pulsed Laser Deposition. The influence of the deposition parameters like substrate temperature and RF presence on the structure and morphology of the deposited layers was studied. Techniques as Atomic Force Microscopy, X-ray Diffraction, Non-Rutherford Backscattering Spectrometry and optical measurements have been used to characterize the deposited layers. It was found that polycrystalline zirconia thin films with uniform surface morphology, holes and cracks free, were obtained at 873 K substrate temperature, for a RF power of 150 W.