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Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.udud

机译：射频等离子体辅助分子束外延对Si（111）上生长的GaN薄膜进行光学表征。 ud ud

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The wide band gap gallium nitride (GaN) based semiconductor system has great potential for applications in high-power, high-frequency, and hightemperature optoelectronic devices due to its superior properties, such as large breakdown field, high electron mobility, and thermal stability at elevated temperature.udud

机译：基于宽带隙氮化镓（GaN）的半导体系统具有卓越的性能，例如较大的击穿场，高电子迁移率和热稳定性，在高功率，高频和高温光电子器件中具有巨大的应用潜力。高温。 ud ud

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L S Chuah; Hassan Z.; Abu Hassan H;
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年度 2007
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专利

1. Structural and optical characterization of hexagonal crack free GaN films grown on Si(111) by plasma-assisted molecular beam epitaxy (PAMBE) [J] . Optoelectronics and Advanced Materials-Rapid Communications . 2008,第2008期

机译：通过等离子体辅助分子束外延（PAMBE）在Si（111）上生长的六方无裂纹GaN膜的结构和光学表征
2. Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy [J] . Shen X.Q., Takahashi T., Rong X., Applied Physics Letters . 2013,第23期

机译：超薄AlN / GaN超晶格中间层在等离子体辅助分子束外延生长在Si（110）和Si（111）衬底上生长的GaN膜的应变工程中的作用
3. Role of an ultra-thin AIN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy [J] . X. Q. Shen, T. Takahashi, X. Rong, Applied Physics Letters . 2013,第23期

机译：超薄AIN / GaN超晶格中间层在等离子体辅助分子束外延生长在Si（110）和Si（111）衬底上生长的GaN薄膜的应变工程中的作用
4. Characterization of p- and n-type GaN thin films grown by plasma-assisted molecular beam epitaxy [C] . Radzali Rosfariza, Zainal Norzaini, Kwong Yam Fong, 2012 International Conference on Enabling Science and Nanotechnology . 2012

机译：等离子体辅助分子束外延生长的p型和n型GaN薄膜的表征
5. Structure, morphology, and kinetics of GaN film growth using gas-source and RF plasma-assisted metal-organic molecular beam epitaxy [D] . Woll, Arthur Randall 2000

机译：使用气体源和RF等离子体辅助金属 - 有机分子束外延对GaN薄膜生长的结构，形态和动力学
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.udud [O] . L S Chuah, Hassan Z., Abu Hassan H 2007

机译：射频等离子体辅助分子束外延对Si（111）上生长的GaN薄膜进行光学表征。 ud ud

Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.udud

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