in-situ Hydrogenated CVD a-Si:H

摘要

Experimental studies have been carried out on growth and properties of hydrogenated amorphous silicon prepared by alternately repeating thermal chemical- vapor deposition (CVD) from disilane and hydrogen plasma (HP) treatment (referred to as HP treated CVD a-Si:H). It has been found that hydrogen-plasma treatment induces significant structural relaxation of Si network in addition to the passivation of Si dangling bonds. The effective thickness of this passivated layer has been estimated to be 220A.