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Advanced CMP Processes for Special Substrates and for Device Manufacturing in MEMS Applications

机译:适用于特殊基板和MEMS应用中器件制造的高级CMP工艺

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The present work reports on studies and process developments to utilize the chemical mechanical planarization (CMP) technology in the field of micro electrical mechanical systems (MEMS). Approaches have been undertaken to enable the manufacturing of thick film SOI (silicon-on-insulator) substrates with a high degree of flatness as well as utilizing CMP for the formation of several novel MEMS devices. Thick film SOI wafers are of high interest in MEMS manufacturing as they offer obvious benefits as a starting material or foundation for more complex structures. Precise control of the SOI layer thickness as well as the removal uniformity is of critical importance to fully utilize the benefits of this technology. By combining fixed abrasive (FA) pads for polishing and novel grinding techniques it is shown that major improvements can be achieved over the standard manufacturing sequence. Analysis of the material removal rate (MRR) dependency on several process parameters is made. Together with the FA pad vendor a suitable consumable set for SOI is generated, which shows long term stability in the generated process. A comparison with standard methods is undertaken to prove the surface and crystalline quality of the resulting substrate material is equivalent. Analysis is done to understand the microscopic mechanism of removal. The CMP process is applied to several MEMS structures to smooth deposited oxide films and to enable direct wafer bonding (DWB) at low temperatures. This allows the design of bonded multiple stack layers including heat sensitive materials such as metals. FA CMP is applied to large pattern MEMS for total planarization but also for smoothing of the surface of single protruding structures while minimizing edge rounding and preserving the original intended pattern shape. With dedicated CMP steps thick film polysilicon smoothing is demonstrated enabling DWB. The chemo-mechanical particularities of the FA pad are investigated in detail.
机译:本工作报告了在微电子机械系统(MEMS)领域中利用化学机械平面化(CMP)技术的研究和工艺发展。已经采取了一些方法来制造具有高度平坦度的厚膜SOI(绝缘体上硅)衬底,以及利用CMP来形成几种新颖的MEMS器件。厚膜SOI晶片在MEMS制造中备受关注,因为它们作为更复杂结构的起始材料或基础具有明显的优势。精确控制SOI层厚度以及去除均匀性对于充分利用该技术的优势至关重要。通过将用于抛光的固定磨料(FA)垫和新颖的磨削技术相结合,可以证明在标准制造过程中可以实现重大改进。分析了材料去除率(MRR)对几个工艺参数的依赖性。与FA Pad垫供应商一起,生成了适用于SOI的易耗品,这表明所生成过程具有长期稳定性。与标准方法进行比较,以证明所得基材材料的表面和晶体质量相同。进行分析以了解去除的微观机制。 CMP工艺应用于几种MEMS结构,以平滑沉积的氧化膜,并在低温下实现直接晶圆键合(DWB)。这允许设计包括热敏感材料(例如金属)的结合的多个堆叠层。 FA CMP应用于大型图案MEMS,以实现整体平坦化,还可以平滑单个突出结构的表面,同时最大程度地减少边缘倒圆并保留原始的预期图案形状。通过专用的CMP步骤,证明了厚膜多晶硅平滑技术可以实现DWB。详细研究了FA垫的化学机械特性。

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