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首页> 外文期刊>IEEE Transactions on Plasma Science >Modeling of plasma behavior in a plasma electrode Pockels cell
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Modeling of plasma behavior in a plasma electrode Pockels cell

机译:等离子体电极Pockels电池中等离子体行为的建模

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摘要

We present three interrelated models of plasma behavior in a plasma electrode Pockels cell (PEPC). In a PEPC, plasma discharges are formed on both sides of a thin, large-aperture electro-optic crystal (typically KDP). The plasmas act as optically transparent, highly conductive electrodes, allowing uniform application of a longitudinal field to induce birefringence in the crystal. First, we model the plasma in the thin direction, perpendicular to the crystal, via a one-dimensional fluid model. This yields the electron temperature and the density and velocity profiles in this direction as functions of the neutral pressure, the plasma channel width, and the discharge current density. Next, me model the temporal response of the crystal to the charging process, combining a circuit model with a model of the sheath which forms near the crystal boundary. This model gives the time-dependent voltage drop across the sheath as a function of electron density at the sheath entrance. Finally, we develop a two dimensional MHD model of the planar plasma, in order to calculate the response of the plasma to magnetic fields. We show how the plasma uniformity is affected by the design of the current return, by the longitudinal field from the cathode magnetron, and by fields from other sources. This model also gives the plasma sensitivity to the boundary potential at which the top and bottom of the discharge are held. We validate these models by showing how they explain observations in three large Pockels cells built at Lawrence Livermore National Laboratory.
机译:我们目前在等离子体电极普克尔斯细胞(PEPC)中的等离子体行为的三个相互关联的模型。在PEPC中,等离子体放电在薄的大孔径电光晶体(通常为KDP)的两侧形成。等离子体充当光学透明的高导电电极,允许均匀施加纵向场以在晶体中引起双折射。首先,我们通过一维流体模型在垂直于晶体的薄方向上对等离子体进行建模。这样就产生了电子温度以及该方向上的密度和速度分布,该分布是中性压力,等离子通道宽度和放电电流密度的函数。接下来,我将晶体对充电过程的时间响应进行建模,将电路模型与在晶体边界附近形成的护套模型结合在一起。该模型给出了鞘管两端随时间变化的电压降,该压降是鞘管入口处电子密度的函数。最后,我们开发了平面等离子体的二维MHD模型,以计算等离子体对磁场的响应。我们展示了等离子体均匀性如何受电流返回设计,阴极磁控管的纵向磁场以及其他来源的磁场影响。该模型还使等离子体灵敏度对保持放电顶部和底部的边界电势敏感。我们通过展示它们如何解释在劳伦斯·利弗莫尔国家实验室(Lawrence Livermore National Laboratory)建立的三个大型普克尔斯细胞中的观察结果来验证这些模型。

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